AlN-On-Sapphire
AlN-On-Sapphire can be used to make a variety of photoelectric devices, such as:
1. LED chips: LED chips are usually made of aluminum nitride films and other materials. The efficiency and stability of leds can be improved by using AlN-On-Sapphire wafers as the substrate of LED chips.
2. Lasers: AlN-On-Sapphire wafers can also be used as substrates for lasers, which are commonly used in medical, communications, and materials processing.
3. Solar cells: The manufacture of solar cells requires the use of materials such as aluminum nitride. AlN-On-Sapphire as a substrate can improve the efficiency and life of solar cells.
4. Other optoelectronic devices: AlN-On-Sapphire wafers can also be used to manufacture photodetectors, optoelectronic devices, and other optoelectronic devices.
In conclusion, AlN-On-Sapphire wafers are widely used in the opto-electrical field due to their high thermal conductivity, high chemical stability, low loss and excellent optical properties.
50.8mm/100mm AlN Template on NPSS/FSS
| Item |
Remarks |
| Description |
AlN-on-NPSS template |
AlN-on-FSS template |
| Wafer diameter |
50.8mm, 100mm |
| Substrate |
c-plane NPSS |
c-plane Planar Sapphire (FSS) |
| Substrate Thickness |
50.8mm, 100mmc-plane Planar Sapphire (FSS)100mm : 650 um |
| Thickness of AIN epi-layer |
3~4 um (target: 3.3um) |
| Conductivity |
Insulating |
|
Surface
|
As grown |
| RMS<1nm |
RMS<2nm |
| Backside |
Grinded |
| FWHM(002)XRC |
< 150 arcsec |
< 150 arcsec |
| FWHM(102)XRC |
< 300 arcsec |
< 300 arcsec |
| Edge Exclusion |
< 2mm |
< 3mm |
| Primary flat orientation |
a-plane+0.1° |
| Primary flat length |
50.8mm: 16+/-1 mm 100mm: 30+/-1 mm |
| Package |
Packaged in shipping box or single wafer container |
Detailed Diagram