(1) High temperature baking, sapphire substrate is first heated to 1050℃ in a hydrogen atmosphere, the purpose is to clean the substrate surface;
(2) When the substrate temperature drops to 510℃, a low-temperature GaN/AlN buffer layer with a thickness of 30nm is deposited on the surface of the sapphire substrate;
(3) Temperature rise to 10 ℃, the reaction gas ammonia, trimethylgallium and silane are injected, respectively control the corresponding flow rate, and the silicon-doped N-type GaN of 4um thickness is grown;
(4) The reaction gas of trimethyl aluminum and trimethyl gallium was used to prepare silicon-doped N-type A⒑ continents with a thickness of 0.15um;
(5) 50nm Zn-doped InGaN was prepared by injecting trimethylgallium, trimethylindium, diethylzinc and ammonia at a temperature of 8O0℃ and controlling different flow rates respectively;
(6) The temperature was increased to 1020℃, trimethylaluminum, trimethylgallium and bis (cyclopentadienyl) magnesium were injected to prepare 0.15um Mg doped P-type AlGaN and 0.5um Mg doped P-type G blood glucose;
(7) High quality P-type GaN Sibuyan film was obtained by annealing in nitrogen atmosphere at 700℃;
(8) Etching on the P-type G stasis surface to reveal the N-type G stasis surface;
(9) Evaporation of Ni/Au contact plates on p-GaNI surface, evaporation of △/Al contact plates on ll-GaN surface to form electrodes.
| Item |
GaN-T-C-U-C100 |
GaN-T-C-N-C100 |
| Dimensions |
e 100 mm ± 0.1 mm |
|
| Thickness |
4.5±0.5 um Can be customized |
|
| Orientation |
C-plane(0001) ±0.5° |
|
| Conduction Type |
N-type (Undoped) |
N-type (Si-doped) |
| Resistivity(300K) |
< 0.5 Q・cm |
< 0.05 Q・cm |
| Carrier Concentration |
< 5x1017 cm-3 |
> 1x1018 cm-3 |
| Mobility |
~ 300 cm2/V-s |
~ 200 cm2/V-s |
| Dislocation Density |
Less than 5x108 cm-2 (calculated by FWHMs of XRD) |
|
| Substrate structure |
GaN on Sapphire(Standard: SSP Option: DSP) |
|
| Useable Surface Area |
> 90% |
|
| Package |
Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere. |
|